Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz.

By:

Nosaeva, Ksenia [Author]

Material type: Text

text

Media type:

computer

Carrier type:

online resource

ISBN:

3736982879
9783736982871

Subject(s):

Modulation-doped field-effect transistors

Genre/Form:

Electronic Books.

LOC classification:

TK7871 .I535 2016

Online resources:

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Available additional physical forms:

Contents:

sink InP HBT MMICs; 6 Summary; 7 Outlook; Publications; Appendix; Bibliography.

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Holdings
Item type	Current library	Collection	Call number	URL	Status	Date due	Barcode
Online Book (LOGIN USING YOUR MY CIU LOGIN AND PASSWORD)	G. Allen Fleece Library ONLINE	Non-fiction	TK7871.95.673 2016 (Browse shelf(Opens below))	Link to resource	Available		on1003264027

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Previous	QA76.76.63 Predictable and Runtime-Adaptable Network-On-Chip for Mixed-critical Real-time Systems	TD885.5.3 Development of a Ship-Based CO2 Transport Chain.	TK5103.592.38 Entwicklung eines Wavelenght Division Multiplex (WDM) Demultiplexer für Optische Polymerfasern (POF)	TK7871.95.673 2016 Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz.	QD172.2.4 2016 Synthesis of Chiral Rare Earth and Alkaline Earth Compounds : Magnetism and Catalytic Studies.	TK7871.58.6 Filter Helices in Low-Frequency Traveling-Wave Tubes.	TK5103.592.52 Wavelength Division Multiplexing for Short-Range Communication Over 1 mm Step-Index Polymer Optical Fiber.	Next

Acknowledgment; Zusammenfassung; Abstract; Contents; 1 Introduction; 2 Diamond substrate properties; 3 Thermal resistance of HBTs; 4 Electrical and thermal via connection through the diamond layer; 5 Full process integration and realization of diamond heat -- sink InP HBT MMICs; 6 Summary; 7 Outlook; Publications; Appendix; Bibliography.

Includes bibliographical references.

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