Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz.
Nosaeva, Ksenia.
Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz. - Göttingen : Cuvillier Verlag, (c)2016. - 1 online resource (155 pages) - Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; v. 36 .
Includes bibliographical references.
Acknowledgment; Zusammenfassung; Abstract; Contents; 1 Introduction; 2 Diamond substrate properties; 3 Thermal resistance of HBTs; 4 Electrical and thermal via connection through the diamond layer; 5 Full process integration and realization of diamond heat -- sink InP HBT MMICs; 6 Summary; 7 Outlook; Publications; Appendix; Bibliography.
3736982879 9783736982871
Modulation-doped field-effect transistors.
Electronic Books.
TK7871 / .I535 2016
Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz. - Göttingen : Cuvillier Verlag, (c)2016. - 1 online resource (155 pages) - Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; v. 36 .
Includes bibliographical references.
Acknowledgment; Zusammenfassung; Abstract; Contents; 1 Introduction; 2 Diamond substrate properties; 3 Thermal resistance of HBTs; 4 Electrical and thermal via connection through the diamond layer; 5 Full process integration and realization of diamond heat -- sink InP HBT MMICs; 6 Summary; 7 Outlook; Publications; Appendix; Bibliography.
3736982879 9783736982871
Modulation-doped field-effect transistors.
Electronic Books.
TK7871 / .I535 2016