Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz.
Material type:
TextSeries: Publication details: Göttingen : Cuvillier Verlag, (c)2016.Description: 1 online resource (155 pages)Content type: - text
- computer
- online resource
- 3736982879
- 9783736982871
- TK7871 .I535 2016
- COPYRIGHT NOT covered - Click this link to request copyright permission: https://lib.ciu.edu/copyright-request-form
| Item type | Current library | Collection | Call number | URL | Status | Date due | Barcode | |
|---|---|---|---|---|---|---|---|---|
Online Book (LOGIN USING YOUR MY CIU LOGIN AND PASSWORD)
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G. Allen Fleece Library ONLINE | Non-fiction | TK7871.95.673 2016 (Browse shelf(Opens below)) | Link to resource | Available | on1003264027 |
Acknowledgment; Zusammenfassung; Abstract; Contents; 1 Introduction; 2 Diamond substrate properties; 3 Thermal resistance of HBTs; 4 Electrical and thermal via connection through the diamond layer; 5 Full process integration and realization of diamond heat -- sink InP HBT MMICs; 6 Summary; 7 Outlook; Publications; Appendix; Bibliography.
Includes bibliographical references.
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