000			02451cam a2200325Ii 4500
001			on1292074414
003			OCoLC
005			20240726104849.0
008			220114s2021 xxu o 000 0 eng d
040			_aIEEEE _beng _erda _epn _cIEEEE _dOCLCO _dYDX _dNT
020			_a9781630818692 _q((electronic)l(electronic)ctronic)
050	0	4	_aTK7871 _b.N665 2021
049			_aMAIN
100	1		_aLadbrooke, Peter, _e1
245	1	0	_aNonlinear design : _bFETs and HEMTs / _cPeter Ladbrooke.
300			_a1 online resource
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_adata file _2rda
504			_a2
520	0		_aDespite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits.   This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators.   The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used-the Angelov (or Chalmers) model.
530			_a2 _ub
650		0	_aField-effect transistors _xDesign and construction.
655		1	_aElectronic Books.
856	4	0	_zClick to access digital title | log in using your CIU ID number and my.ciu.edu password. _uhttpss://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=3158432&site=eds-live&custid=s3260518
942			_cOB _D _eEB _hTK. _m2021 _QOL _R _x _8NFIC _2LOC
994			_a92 _bNT
999			_c80907 _d80907
902			_a1 _bCynthia Snell _c1 _dCynthia Snell