000			03205cam a2200373Mi 4500
001			on1246582541
003			OCoLC
005			20240726104837.0
008			210417s2021 gw o ||| 0 eng d
040			_aEBLCP _beng _erda _cEBLCP _dYDX _dSFB _dOCLCQ _dNT
020			_a3736963963
020			_a9783736963962 _q((electronic)l(electronic)ctronic)
050	0	4	_aTA1700 _b.E658 2021
049			_aMAIN
100	1		_aKaul, Thorben. _e1
245	1	0	_aEpitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers
300			_a1 online resource (137 pages).
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_adata file _2rda
490	1		_aInnovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; _vv.62
500			_aDescription based upon print version of record.
504			_a2
505	0	0	_aIntro -- _tContents -- _tList of Publications -- _tAbstract -- _tKurzfassung -- _t1 Introduction -- _t1.1 Structure and method of this work -- _t2 Fundamentals -- _t2.1 Laser technology and market context -- _t2.2 Fabrication technology -- _t2.3 Mathematical framework of semiconductor lasers -- _t2.4 Parameters for characterization of broad area diode lasers -- _t2.5 Simulation tools -- _t2.6 Device configurations and measurement setups -- _t3 Literature Review, Prior State of the Art and Target Specifications -- _t3.1 Power and efficiency limiting effects -- _tan overview -- _t3.2 Target specifications -- _t3.3 Prior state of the art high power diode lasers and laser bars -- _t4 Novel Epitaxial Layer-Stack Design for Increased Efficiency -- _t4.1 General epitaxial design considerations -- _t4.2 Prior state of the art epitaxial design concepts and their limits -- _t4.3 ETAS: The novel extreme triple asymmetric design concept -- _t5 Diagnosis and Analysis of Power Limiting Mechanisms -- _t5.1 Devices designed and used for diagnosis -- _t5.2 Quantifying thermal- and bias-driven contributions to rollover -- _t5.3 Bias-driven power limitations -- _t5.4 Thermal-driven power limitations -- _t6 Performance of Diode Lasers Using Optimized VerticalDesigns -- _t6.1 Impact of optical confinement on T0 and T1 -- _t6.2 Measurement results of diode laser bars -- _t6.3 Short-term perspective for further improved performance -- _t7 Conclusion and Outlook -- _t7.1 The role of optical loss in thermal power saturation -- _t7.2 The role of internal differential quantum efficiency in thermal power saturation -- _t7.3 Performance of optimized devices using the novel ETAS design -- _t7.4 Outlook -- _t8 Acknowledgements -- _tA Appendix -- _tB List of Abbreviations -- _tBibliography.
530			_a2 _ub
650		0	_aSemiconductor lasers.
650		0	_aDiodes.
655		1	_aElectronic Books.
856	4	0	_zClick to access digital title | log in using your CIU ID number and my.ciu.edu password. _uhttpss://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=2910466&site=eds-live&custid=s3260518
942			_cOB _D _eEB _hTA _m2021 _QOL _R _x _8NFIC _2LOC
994			_a92 _bNT
999			_c80209 _d80209
902			_a1 _bCynthia Snell _c1 _dCynthia Snell