| 000 | 01842cam a2200361Mi 4500 | ||
|---|---|---|---|
| 001 | on1003264027 | ||
| 003 | OCoLC | ||
| 005 | 20240726104809.0 | ||
| 008 | 170909s2016 gw ob 000 0 eng d | ||
| 040 |
_aEBLCP _beng _epn _erda _cEBLCP _dMERUC _dYDX _dOCLCQ _dEZ9 _dOCLCO _dOCLCF _dOCLCQ _dLVT _dOCLCQ _dOCLCO _dK6U _dOCLCQ _dNT |
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| 020 | _a3736982879 | ||
| 020 |
_a9783736982871 _q((electronic)l(electronic)ctronic) |
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| 050 | 0 | 4 |
_aTK7871 _b.I535 2016 |
| 049 | _aMAIN | ||
| 100 | 1 |
_aNosaeva, Ksenia. _e1 |
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| 245 | 1 | 0 | _aIndium phosphide HBT in thermally optimized periphery for applications up to 300 GHz. |
| 260 |
_aGöttingen : _bCuvillier Verlag, _c(c)2016. |
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| 300 | _a1 online resource (155 pages) | ||
| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 347 |
_adata file _2rda |
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| 490 | 1 |
_aInnovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; _vv. 36 |
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| 505 | 0 | 0 |
_aAcknowledgment; Zusammenfassung; Abstract; Contents; 1 Introduction; 2 Diamond substrate properties; 3 Thermal resistance of HBTs; 4 Electrical and thermal via connection through the diamond layer; 5 Full process integration and realization of diamond heat -- _tsink InP HBT MMICs; 6 Summary; 7 Outlook; Publications; Appendix; Bibliography. |
| 504 | _a1 | ||
| 530 |
_a2 _ub |
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| 650 | 0 | _aModulation-doped field-effect transistors. | |
| 655 | 1 | _aElectronic Books. | |
| 856 | 4 | 0 |
_zClick to access digital title | log in using your CIU ID number and my.ciu.edu password. _uhttpss://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&db=nlabk&AN=2129117&site=eds-live&custid=s3260518 |
| 942 |
_cOB _D _eEB _hTK.. _m2016 _QOL _R _x _8NFIC _2LOC |
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| 994 |
_a92 _bNT |
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| 999 |
_c78581 _d78581 |
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| 902 |
_a1 _bCynthia Snell _c1 _dCynthia Snell |
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