TY  - BOOK
AU  - Della Casa,Pietro
TI  - Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes
T2  - Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik
SN  - 9783736963979
AV  - QD921 .T867 2021
KW  - Epitaxy
KW  - Metal organic chemical vapor deposition
KW  - Electronic Books
N1  - Description based upon print version of record; 2; Intro --; 1 Introduction --; 2 Zincblende III-V semiconductors --; 2.2 Zincblende crystal structure --; 2.3 Point defects in III-V semiconductors --; 2.4 III-V semiconductors and optoelectronics --; 3 MOVPE growth of III-V compounds --; 3.1 Introductory remarks on the MOVPE technique --; 3.2 Planetary reactors AIX2400G3 and AIX2800G4 --; 3.3 Precursors selected for the experimental work --; 3.4 Dopants and impurities incorporation --; 4 In-situ etching with CBr4 --; 4.1 Motivation for in-situ etching --; 4.2 Pre-existing research on in-situ etching --; 4.3 Investigation of CBr4 etching of GaAs; 4.4 Investigation of CBr4 etching of GaAs assisted with TMGa and TMAl --; 4.5 CBr4 etching of AlGaAs and GaInP --; 5 SG-DBR tunable lasers --; 5.1 Chapter introduction --; 5.2 SG-DBR lasers --; 5.3 Thermally tuned SG-DBR lasers --; 5.4 Investigation of electronic tuning --; 6 Buried-mesa broad-area lasers --; 6.1 Chapter introduction --; 6.2 High-power lasers --; 6.3 Structure and process --; 6.4 Results and discussion --; 6.5 Chapter summary and conclusions --; 7 Lasers with buried implantation --; 7.1 Chapter introduction --; 7.2 Ion implantation --; 7.3 Device description and fabrication procedure; 7.4 Material characterization --; 7.5 Characterization of as-cleaved devices --; 7.6 Characterization of coated and mounted devices --; 7.7 Step-stress tests --; 7.8 Chapter summary and conclusions --; 8 Summary and outlook --; A1 Zincblende III-V semiconductors and related properties --; A1.1 Appendix content --; A1.2 Composition, bonding and related properties --; A1.3 Crystal structure --; A1.4 Ternary and higher order compounds --; A1.5 Epitaxial multilayers: mismatch, strain, relaxation --; A1.6 Defects --; A1.7 Electronic structure and related properties --; A1.8 Carrier transport; 2; b
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