Epitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers

Description based upon print version of record.

Includes bibliographies and index.

Intro -- Contents -- List of Publications -- Abstract -- Kurzfassung -- 1 Introduction -- 1.1 Structure and method of this work -- 2 Fundamentals -- 2.1 Laser technology and market context -- 2.2 Fabrication technology -- 2.3 Mathematical framework of semiconductor lasers -- 2.4 Parameters for characterization of broad area diode lasers -- 2.5 Simulation tools -- 2.6 Device configurations and measurement setups -- 3 Literature Review, Prior State of the Art and Target Specifications -- 3.1 Power and efficiency limiting effects -- an overview -- 3.2 Target specifications -- 3.3 Prior state of the art high power diode lasers and laser bars -- 4 Novel Epitaxial Layer-Stack Design for Increased Efficiency -- 4.1 General epitaxial design considerations -- 4.2 Prior state of the art epitaxial design concepts and their limits -- 4.3 ETAS: The novel extreme triple asymmetric design concept -- 5 Diagnosis and Analysis of Power Limiting Mechanisms -- 5.1 Devices designed and used for diagnosis -- 5.2 Quantifying thermal- and bias-driven contributions to rollover -- 5.3 Bias-driven power limitations -- 5.4 Thermal-driven power limitations -- 6 Performance of Diode Lasers Using Optimized VerticalDesigns -- 6.1 Impact of optical confinement on T0 and T1 -- 6.2 Measurement results of diode laser bars -- 6.3 Short-term perspective for further improved performance -- 7 Conclusion and Outlook -- 7.1 The role of optical loss in thermal power saturation -- 7.2 The role of internal differential quantum efficiency in thermal power saturation -- 7.3 Performance of optimized devices using the novel ETAS design -- 7.4 Outlook -- 8 Acknowledgements -- A Appendix -- B List of Abbreviations -- Bibliography.

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