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Two-step MOVPE, in-situ etching and buried implantation applications to the realization of GaAs laser diodes.

By: Material type: TextTextSeries: Description: 1 online resource (251 pages)Content type:
  • text
Media type:
  • computer
Carrier type:
  • online resource
ISBN:
  • 9783736963979
  • 3736963971
Subject(s): Genre/Form: LOC classification:
  • QD921 .T867 2021
Online resources: Available additional physical forms:
Contents:
1 Introduction -- 2 Zincblende III-V semiconductors -- 2.2 Zincblende crystal structure -- 2.3 Point defects in III-V semiconductors -- 2.4 III-V semiconductors and optoelectronics -- 3 MOVPE growth of III-V compounds -- 3.1 Introductory remarks on the MOVPE technique -- 3.2 Planetary reactors AIX2400G3 and AIX2800G4 -- 3.3 Precursors selected for the experimental work -- 3.4 Dopants and impurities incorporation -- 4 In-situ etching with CBr4 -- 4.1 Motivation for in-situ etching -- 4.2 Pre-existing research on in-situ etching -- 4.3 Investigation of CBr4 etching of GaAs
4.5 CBr4 etching of AlGaAs and GaInP -- 5 SG-DBR tunable lasers -- 5.1 Chapter introduction -- 5.2 SG-DBR lasers -- 5.3 Thermally tuned SG-DBR lasers -- 5.4 Investigation of electronic tuning -- 6 Buried-mesa broad-area lasers -- 6.1 Chapter introduction -- 6.2 High-power lasers -- 6.3 Structure and process -- 6.4 Results and discussion -- 6.5 Chapter summary and conclusions -- 7 Lasers with buried implantation -- 7.1 Chapter introduction -- 7.2 Ion implantation -- 7.3 Device description and fabrication procedure
7.5 Characterization of as-cleaved devices -- 7.6 Characterization of coated and mounted devices -- 7.7 Step-stress tests -- 7.8 Chapter summary and conclusions -- 8 Summary and outlook -- A1 Zincblende III-V semiconductors and related properties -- A1.1 Appendix content -- A1.2 Composition, bonding and related properties -- A1.3 Crystal structure -- A1.4 Ternary and higher order compounds -- A1.5 Epitaxial multilayers: mismatch, strain, relaxation -- A1.6 Defects -- A1.7 Electronic structure and related properties -- A1.8 Carrier transport
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Description based upon print version of record.

Includes bibliographies and index.

Intro -- 1 Introduction -- 2 Zincblende III-V semiconductors -- 2.2 Zincblende crystal structure -- 2.3 Point defects in III-V semiconductors -- 2.4 III-V semiconductors and optoelectronics -- 3 MOVPE growth of III-V compounds -- 3.1 Introductory remarks on the MOVPE technique -- 3.2 Planetary reactors AIX2400G3 and AIX2800G4 -- 3.3 Precursors selected for the experimental work -- 3.4 Dopants and impurities incorporation -- 4 In-situ etching with CBr4 -- 4.1 Motivation for in-situ etching -- 4.2 Pre-existing research on in-situ etching -- 4.3 Investigation of CBr4 etching of GaAs

4.4 Investigation of CBr4 etching of GaAs assisted with TMGa and TMAl -- 4.5 CBr4 etching of AlGaAs and GaInP -- 5 SG-DBR tunable lasers -- 5.1 Chapter introduction -- 5.2 SG-DBR lasers -- 5.3 Thermally tuned SG-DBR lasers -- 5.4 Investigation of electronic tuning -- 6 Buried-mesa broad-area lasers -- 6.1 Chapter introduction -- 6.2 High-power lasers -- 6.3 Structure and process -- 6.4 Results and discussion -- 6.5 Chapter summary and conclusions -- 7 Lasers with buried implantation -- 7.1 Chapter introduction -- 7.2 Ion implantation -- 7.3 Device description and fabrication procedure

7.4 Material characterization -- 7.5 Characterization of as-cleaved devices -- 7.6 Characterization of coated and mounted devices -- 7.7 Step-stress tests -- 7.8 Chapter summary and conclusions -- 8 Summary and outlook -- A1 Zincblende III-V semiconductors and related properties -- A1.1 Appendix content -- A1.2 Composition, bonding and related properties -- A1.3 Crystal structure -- A1.4 Ternary and higher order compounds -- A1.5 Epitaxial multilayers: mismatch, strain, relaxation -- A1.6 Defects -- A1.7 Electronic structure and related properties -- A1.8 Carrier transport

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