GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements
Luo, Peng.
GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements - Göttingen : Cuvillier Verlag, (c)2019. - 1 online resource (161 pages) - Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; v. 46 .
Includes bibliographies and index.
3736989067 9783736989061
Field-effect transistors--Congresses.
Electronic Books.
TK7871 / .G364 2019
GaN HEMT Modeling Including Trapping Effects Based on Chalmers Model and Pulsed S-Parameter Measurements - Göttingen : Cuvillier Verlag, (c)2019. - 1 online resource (161 pages) - Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; v. 46 .
Includes bibliographies and index.
3736989067 9783736989061
Field-effect transistors--Congresses.
Electronic Books.
TK7871 / .G364 2019